Ultrafast control of inelastic tunneling in a double semiconductor quantum well

Ultrafast Semiconductor Quantum Optics

Resonant Tunneling in Photonic Double Quantum Well Heterostructures

Here, we study the resonant photonic states of photonic double quantum well (PDQW) heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states....

Resonant tunneling in double-quantum-well triple-barrier heterostructures.

We present a low-temperature ~mK! magnetotransport study, using intense pulsed magnetic fields to 50 T, of two double GaAs quantum well, triple AlAs barrier resonant tunneling structures, which demonstrates the critical influence of the second quantum well on the tunneling behavior. We show that charge accumulation in the first well, and thus the overall tunneling characteristic, is controlled ...

Current fluctuations in double-barrier quantum well resonant tunneling diodes

The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Alo,,Gae,As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-...

Unusual Tunneling Characteristics of Double-quantum-well Heterostructures

We report tunneling phenomena in double In0.53Ga0.47As quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling between two-dimensional systems. We found that the tunneling current was mostly determined by the correlation between the emitter and the state in one well, and not by that between those in both wells. Clear magnetic-field-depend...